| 摘要 |
PURPOSE:To obtain the entitled photomask through a short manufacture process at low cost, by modifying a hard plate having a selectively formed photoresist film on one flat side in air plasma, and treating it by wet type etching. CONSTITUTION:A thin film layer 2 of metal, such as chromium or iron oxide is formed on a base of transparent glass 1 or the like to form a hard plate, and the layer 2 is coated with a 50nm - several thousand nm thick photoresist film. The film 3 is selectively exposed and developed to obtain a desired photoresist pattern 3', and further exposed to the atmosphere of plasma radical 4. The layers 2, 3' are etched in an etching soln. of cerium type for 30-60sec, thus obtaining an objective photomask for photographic etching used in the manufacture process of semiconductor devices, etc. |
