发明名称 |
Method for fabricating high voltage semiconductor device |
摘要 |
A method for fabricating a high voltage semiconductor device, which comprises a semiconductor substrate; a gate insulation layer formed on the semiconductor substrate; and a gate electrode formed on the gate insulation layer, comprising: forming a mask pattern on the semiconductor substrate; forming a first low-density impurity implanted region on the semiconductor substrate using the mask pattern, in which the first low-density impurity implanted region is overlapped with the gate electrode; selectively removing a part of the mask pattern from a region where the gate electrode is to be formed to form a gate-formation mask; and forming the gate insulating layer and the gate electrode using the gate-formation mask.
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申请公布号 |
US7402494(B2) |
申请公布日期 |
2008.07.22 |
申请号 |
US20060641909 |
申请日期 |
2006.12.20 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
YAJIMA TSUKASA |
分类号 |
H01L21/8234;H01L21/332;H01L21/336 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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