| 摘要 |
PURPOSE:To improve resolution characteristics, by forming recessed parts partially on a selectively oxidized film at surface boundaries of photoelectric conversion parts. CONSTITUTION:The recessed parts 13 are obtained by providing oxidized films 12 in a selective oxidizing method LOCOS and formed easily by photoetching while a mask is used. Incident light l is gathered more by storage parts 1a, 2a...(n-1)a, na of the opposite conduction type to a substrate by the lens effect of a CVD oxidized film 10 and the amount of light incident to areas 1b, 2b...(n+1)b where no electric field is applied decreases relatively. Consequently, charges converted photoelectrically in areas right under the LOCOS oxidized films decrease the amount of incident light, so factors which cause a decrease in resolution are removed. |
