| 摘要 |
PURPOSE:To improve the characteristic of withstand voltage, by changing the shape when an MOS type semiconductor device is manufactured. CONSTITUTION:The diffusion width of a drain is more reduced than that of a source, and an ion implanted and diffused layer under a field oxide film is used as an off-set diffused layer. A stopper diffused layer is provided by self-alignment at least on a channel part, and the stopper diffused layer is formed on the drain diffused layer at a distance. That is, since the stopper diffused layer 15 is formed at a distance from the drain region 14, and thus the stopper diffused layer 15 is formed at the end of the channel part 16 by self-alignment, the width of the drain region 14 becomes smaller than the widths of the channel part and the source region 17. Thereat, the stopper diffused layer 15 can be stretched linearly from the channel region to the drain region 14, but also can be manufactured by bending from the relation of the length of the off-set diffused layer 18. Thereafter, the gate wiring 19 is formed on the channel part 16. |
