| 摘要 |
PURPOSE:To obtain a semiconductor device such as an MOS transistor of high performance and high reliability by forming a source region with an impurity diffused layer and a drain region by the Schottky junction of metal or metal silicide and semiconductor. CONSTITUTION:A fileld oxide film 102, an oxidized film 103, a gate electrode 104, a photoresist pattern 105 are formed on an n type silicon substrate 101, boron ions are implanted to form a p<+> type diffused layer 106 as a source region. The film 103 is selectively etched and removed, an SiO2 film 108 is accumulated, etched, and an SiO2 film 108' remains at the peripheral side of the electrode 104. A Pt film 109 is deposited, heat treatment is performed, a PtSi layer 110 is formed, and a Schottky junction is formed to become a drain region between the layer 110 and the substrate 101. An SiO2 film 111 is accumulated, contacting holes 112,... are opened, and aluminum wirings 113,... are formed. |
