| 摘要 |
PURPOSE:To manufacture a semiconductor device of uniform thickness and thin resin sealed thickness by a method wherein hardening resin is coated on the upper surface of hardened substance and hardened, after the junction part between at least bonding wires and a semiconductor element is coated and hardened with liquid thermosetting resin. CONSTITUTION:The liquid thermosetting resin of epoxy 5 containing fused quartz glass is dripped onto the semiconductor element 3. Next, air bubbles remaining in the liquid thermosetting resin 5 are treated at 70-100 deg.C under vacuum of 3-10mm.Hg resulting in deaeration. Then, masks 10 and a metal screen 11 are provided on a substrate 2, and then paste thermosetting resin 13 is coated on the liquid thermosetting resin 5 after being hardened by a printing roll 12. After coating, when the masks 10 and the screen 11 are removed, and the paste thermosetting resin 13 is heated and hardened, a uniform resin sealed semiconductor device of thin thickness can be obtained. |
