| 摘要 |
PURPOSE:To improve characteristic yield, by removing a thermal oxide film to expose the semiconductor substrate surface in openings again, and then forming an electrode wiring pattern in direct contact with the semiconductor substrate surface exposed in the openings. CONSTITUTION:A PSG insulating film 18 is selectively etched to form therein openings such as a source electrode window 21 and a drain electrode window 22. After the resist mask pattern is removed, thermal oxidation is carried out to form a thermal oxide film 25 on the semiconductor layer surface exposed in the source electrode window 21 and the drain electrode window 22. Then, wet etching treatment is carried out to remove the thermal oxide film 25 to expose the surfaces of impurity-diffused regions, such as a source region 16 and a drain region 17, in the openings such as the source electrode window 21 and the drain electrode window 22 again. On the substrate, an Al-Si alloy layer (containing not more than 5% Si) 26' by a high-temperature sputtering. Then, the Al-Si alloy layer 26' is patterned to form an Al-Si electrode wiring 26 through the openings such as the source electrode window 21 and the drain electrode window 22. |
