| 摘要 |
<p>PHN. 9598 10 A Zener diode having a surface-adjoining first region of a first conductivity type, a second region of the second opposite conductivity type situated within the first region, and a third region of the first conductivity type which is situated at a distance from the surface and which is bounded entirely by the first and the second region and is more highly doped than the first region, the third region being overlapped by the second region on all sides. According to the invention the first region comprises an epitaxial layer which is provided on a more highly doped substrate. The third region is preferably bounded entirely by the second region and by the epitaxial layer. The structure according to the invention provides reproducible breakdown voltages even in the case of series production from semiconductor wafers having a diameter of 76 mm and larger.</p> |
