Method for manufacture of interdigital periodic structure device

摘要

In the manufacture of a superlattice by the MBE method, growth of an epitaxial film on a growth substrate is accomplished by disposing a P-type and an N-type impurity evaporation source at positions adjacent to a main evaporation source and symmetrical to each other relative to the main evaporation source and causing the molecular beams issuing from these evaporation sources to be projected through a mask onto the growth substrate. When the apparatus used for the aforementioned growth of the epitaxial film is additionally provided with a shutter adapted to open and close at least one of the impurity evaporation sources, the projections of the molecular beams can be controlled so as to produce an interdigital periodic structure element.