| 摘要 |
PURPOSE:To obtain a bipolar semiconductor device which has high reliability without production of product which affects the advarse influence to the emitter and base junction as PtxAsy even when As is used as an impurity by converting an undoped semiconductor film into a metal silicide layer. CONSTITUTION:An N<+> type buried layer 22 is formed in a P<-> type silicon substrate 21, an N type epitaxial layer is grown, a thermal oxidation is performed, an isolated oxidized film 25 is buried, and an N type semiconductor layer 26 is formed. A thermally oxidized film 27 is formed, B<+> ions are implanted to form a P type base region 29. Holes 301, 302 are formed, As<+> ions are implanted, thereby forming an N<+> type emitter region 31 an dan N<+> type collector contact region 32. Non-doped polycrystalline silicon film patterns 331, 332 are formed, a window 34 is formed, Pt is deposited, heat treatment is then performed, and converted into PtSi layers 351, 352, PtSi layer 36. Aluminum is deposited to form an emitter electrode 371, a base electrode 372, collector electrode 373. |
