| 摘要 |
PURPOSE:To eliminate an abnormal etching phenomenon under high melting point metal by ion implanting atom of larger weight to a conductive film made of a high melting point metal material, thereby preventing mobile ions from entering the oxidized film. CONSTITUTION:A P<+> type layer 5 (an inversion preventive layer), an SiO2 film (field oxidized film) 6, an SiO2 film (gate oxidized film) 7 are formed on a P type silicon substrate 1, and a molybdenum film 8 to become a high melting point metal gate electrode is deposited. Tungsten ions are implanted, the surface is formed in amorphous state, thereby forming an amorphous film 9. Then, a gate electrode is formed by patterning, phosphorus is diffused to form source and drain regions 10a, 10b made of N<+> type layer. An SiO2 film 11 is accumulated, contacting hole is opened, a molybdenum film 12 is deposited, an amorphous film 13 is similarly formed on the surface. Thereafter, the films 12, 13 are patterned, to form a wiring layer, thereby obtaining an MOS transistor. |
