发明名称 DETECTION OF MARK BY ELECTRON BEAM
摘要 PURPOSE:To detect a mark surely by changing the scanning frequency of an electron beam again and performing scanning when the position of the mark fails to be detected owing to the poor S/N ratio of the reflected electron signal. CONSTITUTION:When a mark for positioning is moved up to the position of an electron beam, the electron beam receives deflection and scans on a sample. The reflected electron signal from the sample is inputted to a detector 13 for reflected electron, and is then processed with a processing unit 15. When the electron beam crosses the mark, the reflected electron signal changes; threfore, the output value of a counter 8 in this stage is taken into a CPU4 through an interface 5. Therefore, the coordinates at the edge of the mark can be determined by calculation. If a wrong timing pulse is outputted from a timing circuit 16 owing to the poor S/N of the reflected electron signal, the pulse is detected with the CPU4. The pulse is then changed over and the detection of the mark is executed again.
申请公布号 JPS58182504(A) 申请公布日期 1983.10.25
申请号 JP19820066795 申请日期 1982.04.19
申请人 MITSUBISHI DENKI KK 发明人 KATOU TADAO;MORIMOTO HIROAKI
分类号 G01B15/00;H01J37/304 主分类号 G01B15/00
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