发明名称 APPARATUS FOR LIQUID PHASE EPITAXIAL GROWTH
摘要 PURPOSE:To prevent the convection of a liquid and the abnormal growth of a crystal by a method wherein, for instance, a grid made of the same material as that of a substrate support or one having higher thermal conductivity is provided in the liquid for growing the crystal. CONSTITUTION:A grid 100 is prepared using a preselected material in a crystalline liquid to make uniform the temperature distribution in the liquid. The grid 100 is constructed with bars made of the preselected material and arranged in parallel or crosswise in parallel, or in integrally. The grid 100 is thermally connected to a liquid support. When the liquid is cooled for growing the crystal, the liquid 7 is cooled from outside and simultaneously from inside via the grid. Accordingly, the temperature distribution in the liquid 7 is made uniform and, because no convection is generated, abnormal growth is prevented. Thus, a superior epitaxial crystal can be obtained.
申请公布号 JPS58182222(A) 申请公布日期 1983.10.25
申请号 JP19820065919 申请日期 1982.04.19
申请人 MATSUSHITA DENKI SANGYO KK 发明人 OONAKA SEIJI;OGURA MOTOTSUGU;HASE NOBUYASU
分类号 H01S5/00;H01L21/208 主分类号 H01S5/00
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