发明名称 RESIST EXFOLIATING METHOD
摘要 PURPOSE:To securely perform exfoliation and remove also dusts deposited in processes on the way by a solvent dip exfoliating process, a solvent spray exfoliating process, a plasma exfoliating process, and a sulfuric acid-hydrogen peroxide exfoliating process. CONSTITUTION:This method consists of the four processes. First, in the solvent dip exfoliating process, the resist coated on a substrate and the most part of resist waste and thread locally deposited thick are removed in a short time. When the substrate 12 is placed into the solvent such as ethyl acetate or methyl ethyl ketone, etc., most resist is dissolved, but the resist dissolved in the solvent re-deposits thin on pulling up. The solvent spray exfoliating process is provided to exfoliate it. Solvent is let to spray by two stray nozzles from the front and back surfaces of the spinning substrate 12, and thus the re-deposited resist is washed away. Thereafter, an extremely thin resist layer which can not be exfoliated even by the solvent dip exfoliating process and the solvent spray exfoliating process is removed by an oxygen plasma treatment in the plasma exfoliating process. Then, the exfoliation of dusts deposited in processes on the way is performed by the sulfuric acid-hydrogen peroxide exfoliating process.
申请公布号 JPS58182827(A) 申请公布日期 1983.10.25
申请号 JP19820066595 申请日期 1982.04.21
申请人 TOKYO SHIBAURA DENKI KK 发明人 TSURUSHIMA TOSHIAKI
分类号 G03F7/42;H01L21/027;H01L21/30;(IPC1-7):01L21/30 主分类号 G03F7/42
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