| 摘要 |
PURPOSE:To enable to reduce the resistance of the diffusion layer as well as to perform a high speed operation of the titled semiconductor device by a method wherein source and drain diffusion layers are formed in slanted shape. CONSTITUTION:An insulating film 15 is thickly and inclinationally formed on the side face of a gate polycrystalline silicon 14. Then, when the high density impurities having the conductivity type reverse to that of a substrate 11 are introduced by performing an ion-implantation method, an ordinary ion implantation is performed on the part 17 where an insulating film 15 is thinly formed at the plane part of the source and drain reion. However, as the introduction of impurities by ion implantation is blocked at the section around the gate polycrystalline silicon 14 where the insulating film 15 is thickly formed, thick impurities are not introduced and the region 16 has gradient in concentration, thereby enabling to form a thin and shallow density ion implanted layer on the region close to the gate electrode and a thicker and deeper ion implanted layer as separating from the gate electrode. |
