| 摘要 |
PURPOSE:To enhance a gettering effect while stably forming the crystal defects of a gettering region in a short time by preparing a region, in which there are a large number of crystal defects, just under an active region. CONSTITUTION:A region layer 12, in which the concentration of ion injected atoms is high-that is, a large number of the crystal defects are made contain, and a layer 13 containing a number of crystal defects are formed through introduction at acceleration voltage through which the position of the concentration peak of atoms is maximized in depth of 1mum or more from the surface of a silicon wafer 11. Electrom beams or laser beams are irradiated onto the whole surface of the silicon wafer 11 and the surface is annealed instantaneously, and the active region of a transistor, etc. is prepared to a surface section 15, in which crystallinity is recovered, of the surface section of the silicon wafer 11. Accordingly, since there is the region layer 12 containing a large number of the crystal defects just under the silicon active region, the layer 12 mixes on subsequent heat treatment and diffusion process, and effectively functions as a getter for impurities and crystal defects generated. |
