| 摘要 |
PURPOSE:To accelerate the driving of a word line and to reduce the power consumption, by avoiding activation of the word lines of non-selected memory element groups. CONSTITUTION:The column selecting address signal is set at a high level, and the signals supplied to memory groups 1 and 2 are set at a prescribed level respectively. The output of a row decoder XD is high, and the outputs of other row decoders XD are low. In such a case, a transmitting MISFET-Ti for the groups 2 and a discharging MISFET-Qi for the group 1 are turned on. While a transmitting MISFET-Ti for the group 1 and a discharging MISFET-Qi for the group 2 are turned off. As a result, no row decoder signal is transmitted to the group 1, and the group 1 is not selected. Thus the word lines of the group 1 which exist within the same row are not activated. |
