| 摘要 |
PURPOSE:To prevent the generation of a crystalline strain, etc. while enabling the insulating isolation of a dielectric having excellent reproducibility by a method wherein the pattern width of a silicon groove is limited to specific value or less, a silicon oxide film is formed in the film thickness of half or more of the pattern width, a silica film is formed onto a polycrystalline silicon film through a spin-coating method, and the silica film and the polycrystalline silicon film are removed simultaneously through etching. CONSTITUTION:The groove 13, the pattern width thereof is 2mum or less such as approximately 1.5mum and depth thereof is approximately 1.3mum, is formed into the surface of a silicon substrate 11. The silicon oxide film 12 is formed in the film thickness of approximately 1,000Angstrom through a thermal oxidation method. When the polycrystalline silicon film 14 is formed in the film thickness of approximately 1.0mum by using a vapor growth method, the polycrystalline silicon film growing on the side surface of the groove is in contact in the central section of the groove, and structure in which the groove is buried partially is obtained. The silica film 15 is formed through the spin- coating method. The silica film and the polycrystalline silicon film are removed simultaneously through a plasma-etching method. The surface of the polycrystalline silicon film is oxidized, a silicon oxide film 16 is formed, and elements are insulated and isolated. |
