| 摘要 |
PURPOSE:To shorten etching time, and to prevent over-etching by simultaneously etching a monitor pattern larger than a main pattern besides the main pattern as a target of an opening. CONSTITUTION:Large and small different monitor patterns 16 of 1X1mum, 2X 2mum, 3X3mum, 4X4mum and 5X5mum are formed to a peripheral section besides the main patterns 15 corresponding to contact holes in a mask 14, and opening sections 17 corresponding to the monitor patterns 16 are formed besides the opening sections corresponding to the main patterns 15 when a photo-resist film 13 is exposed and developed. Accordingly, when the size of the opening sections of the contact holes is the minuteness of approximately 3X3mum or less on etching, the completion of etching is difficult to be made sure because light does not shine to the bottoms of the opening sections, but light shines to the bottoms of the opening sections 18 because the opening sections 18 of the monitor patterns containing the opening sections of the size of 4X4, 5X5mum are formed simultaneously, thus easily making sure a point of time of the completion of etching by a microscope, etc. |
