| 摘要 |
The high-voltage, solid-state switch has a semiconductor body of which the main part has a first conductivity type. This lies on a substrate of opposite conductivity. The body of the device includes two separate regions of opposite conductivity, part of each extending to the main surface of the semiconductor body. These two regions have relatively low resistivity, by comparison with the main body of the semicon-ductor, and operate as the anode and cathode of the device. Contacts are made on these two regions. When it is operating, the device has a double injection of carriers, providing a low-impedance path between the anode and cathode.
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