| 摘要 |
<p>The PN juncture in a silicon chip and an oxide coating on its surface are simultaneously formed from a clear solution. The solution is derived from titanium alkoxides, water, alcohol, a suitable acid, and a P or N dopant compound, through partial hydrolysis and polymerization. The solution is applied to the surface of a silicon chip. The chip is then heated, which converts the solution to a solid oxide coating that meets antireflective optical film requirements and induces the migration of the dopants into the chip, forming a PN junction in the chip. The method also provides deep and uniform junction formation or diffusion.</p> |
