| 摘要 |
PURPOSE:To obtain an electron-beam exposure device, which has excellent accuracy extending over a large region and can deflect beams at high speed, by adding the excessive section of a positional information in a first deflection means to the control information of a second beam deflection means in digitalized quantity and controlling the deflection means. CONSTITUTION:A conversion output 41 from a large-region conversion circuit 40 is divided into two data of 0.05mum or more and less than 0.05mum, and data of 0.05mum or more are transmitted to a DAC 43, and connected to an electromagnetic deflector 46. A conversion output 50 from a small-region conversion circuit 49 is added by a digital adder 52 together with said data 51 of less than 0.05mum. The data are connected to an electrostatic deflector 58. Data are corrected in the large-region conversion circuit 40, deflection data being corrected, i.e. data of 0.05mum or more, are converted into analog value by the DAC 43, and transmitted to the electromagnetic deflector 46, and the position of a small region in the large region is set. Deflection data corrected by the small-region conversion circuit 49 and the deflection data of less than 0.05 corrected by the large-region conversion circuit 40 are added by the digital adder 52, converted by the DAC 55, and inputted to the electrostatic deflector 58. |
