发明名称 CHARACTERISTIC MEASURING DEVICE OF SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To derive a 1dB gain compressing point exactly and quickly, by providing the first and the second detecting parts, and processing a detecting value statistically. CONSTITUTION:A signal level of applied electric power outputted from a signal generator 1 is controlled by a control part 6, and is applied to a transistor to be measured 3 through a directional coupler 2. Input electric power applied to the transistor to be measured 3 is measured exactly by a wattmeter 4, and a measured value is inputted to the control part 6. Output electric power of the transistor to be measured 3 is measured by a wattmeter 5, and a measured value in that case is inputted to the control part. Subsequently, a regression straight line of an electric power gain constant area (linear amplification area) of input and output electric power characteristics of the transistor to be measured is derived, and in accordance with this regression straight line, input electric power in a point where the electric power gain of the transistor drops by 3dB or so is applied, and the output electric power is measured.
申请公布号 JPS58179364(A) 申请公布日期 1983.10.20
申请号 JP19820061889 申请日期 1982.04.14
申请人 NIPPON DENKI KK 发明人 SHIMODA JIYUNICHI
分类号 G01R31/26 主分类号 G01R31/26
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