Semiconductor component

摘要

The invention relates to a semiconductor component, for example a III-V photodiode, having at least one p-n junction which is to be situated geometrically at a certain distance from the heterojunction. This is achieved by a lightly n-doped interlayer which displaces the hetero junction to a certain distance away from the p-doped layer. Said interlayer usually has the composition of the p-doped layer.