| 摘要 |
PURPOSE:To form a pattern of good resolution by controlling a shape of the obtained resist pattern by performing a development under the condition that a temperature distribution is applied in a direction of the thickness of a resist film when developing the resist film after exposure with a developing liquid. CONSTITUTION:If a positive resist film 2 on a substrate 1 is divided into two of high-temperature region H (substrate side) and a low-temperature region L (exposure side) after being exposed, the positive resist pattern 2 as shown in drawings is formed after development. The formation of a temperature distribution in such resist film can be effected by keeping an atmosphere in a developing chamber that of low temperature, for example, by introducing a cooled air, while heating the substrate by use of a means such as a heater. |
