| 摘要 |
PURPOSE:To enable exposure improved in contact, by dividing an exposure region in one chip into the circumference of the chip including a scribe line and the middle part of the chip and exposing each to light. CONSTITUTION:The circumference 22 of the chip on which an asymmetric chevron pattern is not formed is exposed using the first photomask 24. The middle part 21 of the chip having asymmetric chevron patterns using the second photomask 25. Finally, a resist pattern is formed by the prescribed developing method. Development is executed using the mask 24 after development. Since grooves corresponding in depth to the film thickness of a photoresist in the development step, gas produced when contact exposure is carried out using the mask 25 is rapidly exhausted through these grooves, and exposure improved in contact can be executed. Last of all, development is repeated to form the asymmetric chevron patterns in the middle part 21 of the chip. |
