| 摘要 |
PURPOSE:To obtain a beam lead type GaAs Schottky diode which has leads of low stray capacitance by covering the unnecessary part of the periphery of a semiconductor element of a layer on a semi-insulating substrate with an insulating layer by an anodic oxidation or the like, and externally extending leads which are led from the electrodes of the element in contact with the insulating layer. CONSTITUTION:An N<+> type layer 2 and an operating layer 3 forming a Schottky barrier are epitaxially grown on a semi-insulating GaAs substrate 1, and the part except a diode forming part is anodically oxidized to reach the substrate 1, thereby altering it into an anodic oxidation film 4. Subsequently, an SiO2 film 5 by a CVD is covered on the overall surface, an ohmic contact 6 and a Schottky electrode 7 are formed on the diode forming part, and beam leads 8 are respectively led from the electrodes. Since the leads are supported via the CVD oxidized film, anodic oxidation film and semi-insulating substrate in this manner, a parasitic reactance can be remarkably reduced, and the mechanical strength can be increased. |
