发明名称 Static-type semiconductor memory device.
摘要 <p>A static-type semiconductor memory device includes a memory block comprising an array (MCA) of memory cells (MC), holding-current supply circuitry for supplying holding-current to the memory cells, and auxiliary circuitry including memory cell read circuitry (SA, etc.). Means (HC) are included for increasing the holding current and decreasing load current supplied to the auxiliary circuitry, which means operate in response to a predetermined signal indicating that the memory block is not presently selected for use. Such means can protect against loss of stored data without increasing unacceptably the total current supplied to the device.</p>
申请公布号 EP0091815(A2) 申请公布日期 1983.10.19
申请号 EP19830302037 申请日期 1983.04.12
申请人 FUJITSU LIMITED 发明人 KIMOTO, MASAYOSHI
分类号 G11C5/00;G11C11/41;G11C11/414;G11C11/416;(IPC1-7):11C11/40;11C5/00 主分类号 G11C5/00
代理机构 代理人
主权项
地址