发明名称 EBS Device with cold-cathode
摘要 Apparatus and method are described for fabricating a long life cold cathode electron beam semiconductor device (EBS). Fabrication is given of a vacuum tube structure capable of sustaining sufficiently high vacuum over extended time to prevent poisoning of the cold cathode and steps are give for growth of a plural tip cold cathode structure.
申请公布号 US4410832(A) 申请公布日期 1983.10.18
申请号 US19830461291 申请日期 1983.01.27
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY 发明人 SMITH, BERNARD;DUBUSKE, STANLEY
分类号 H01J1/304;H01J21/14;H03F3/58;(IPC1-7):H01J23/16;H01J29/96 主分类号 H01J1/304
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