发明名称 |
EBS Device with cold-cathode |
摘要 |
Apparatus and method are described for fabricating a long life cold cathode electron beam semiconductor device (EBS). Fabrication is given of a vacuum tube structure capable of sustaining sufficiently high vacuum over extended time to prevent poisoning of the cold cathode and steps are give for growth of a plural tip cold cathode structure.
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申请公布号 |
US4410832(A) |
申请公布日期 |
1983.10.18 |
申请号 |
US19830461291 |
申请日期 |
1983.01.27 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY |
发明人 |
SMITH, BERNARD;DUBUSKE, STANLEY |
分类号 |
H01J1/304;H01J21/14;H03F3/58;(IPC1-7):H01J23/16;H01J29/96 |
主分类号 |
H01J1/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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