发明名称 MAGNETIC BUBBLE MEMORY ELEMENT
摘要 PURPOSE:To increase the lower limit of a bias magnetic field, to widen the margin of a bias magnetic field, and to improve the efficiency of the magnetization of a magnet for generating the bias magnetic field when the device of bubble memory is assembled, by tapering barlike patterns. CONSTITUTION:In the figure, a barlike pattern 2a is tapered upwardly. Consequently, coercive force is increased and no magnetization is not performed at this part by the revolving magnetic field, so an intense attracting magnetic pole is not formed. Therefore, a bubble is transferred stably without being attracted to the barlike pattern 2a. Consequently, the lower limit of the bias magnetic field is lowered by about 5 oersted as compared with a conventional lower limit.
申请公布号 JPS58177587(A) 申请公布日期 1983.10.18
申请号 JP19820058133 申请日期 1982.04.09
申请人 HITACHI SEISAKUSHO KK 发明人 OKABASHI TAKUO;HIROSHIMA MINORU;KONDOU HIRONORI
分类号 G11C11/14;G11C19/08 主分类号 G11C11/14
代理机构 代理人
主权项
地址