发明名称 Static induction transistor gate driving circuit
摘要 The disclosure relates to a gate driving circuit for a depletion type, static induction transistor, including a capacitor coupled between the emitters of complementary-connected NPN and PNP transistors and the SIT gate, high value resistor parallel-connected to a series connection of a diode and a resistor between the SIT gate, and a negative gate voltage source.
申请公布号 US4410809(A) 申请公布日期 1983.10.18
申请号 US19810276719 申请日期 1981.06.23
申请人 KABUSHIKI KAISHA MORITA SEISAKUSHO 发明人 FURUICHI, SHUHEI;SUZUKI, MASAKAZU;IKEDA, TOSHIAKI
分类号 H03K17/56;H03K17/0412;H03K17/687;H03K17/691;(IPC1-7):H03K3/01;H03K17/60 主分类号 H03K17/56
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