发明名称 |
Static induction transistor gate driving circuit |
摘要 |
The disclosure relates to a gate driving circuit for a depletion type, static induction transistor, including a capacitor coupled between the emitters of complementary-connected NPN and PNP transistors and the SIT gate, high value resistor parallel-connected to a series connection of a diode and a resistor between the SIT gate, and a negative gate voltage source.
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申请公布号 |
US4410809(A) |
申请公布日期 |
1983.10.18 |
申请号 |
US19810276719 |
申请日期 |
1981.06.23 |
申请人 |
KABUSHIKI KAISHA MORITA SEISAKUSHO |
发明人 |
FURUICHI, SHUHEI;SUZUKI, MASAKAZU;IKEDA, TOSHIAKI |
分类号 |
H03K17/56;H03K17/0412;H03K17/687;H03K17/691;(IPC1-7):H03K3/01;H03K17/60 |
主分类号 |
H03K17/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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