| 摘要 |
PURPOSE:To obtain a semiconductor laser which can be produced without thermal deterioration and crystal distortion due to difference of thermal expansion coefficients and shows excellent heat radiating characteristic. CONSTITUTION:An oscillating layer 2 consisting of GaAl As system material is formed on a semiconductor substrate, a cap layer 21 consisting of a material having good ohmic characteristic is stacked over said oscillating layer in a striped form, and a buried layer 22 consisting of the III-VI compound of the sphalerite type is formed in such a manner as surrounding the cap layer by the molecular beam epitaxial method and a forward bias is applied across the first and second electrodes 23, 24. Thereby, a current is squeezed within the cap layer 21 because the buried layer 22 has a high resistance value and therefore the current path is formed just under the cap layer 21 and a laser beam of a low current and single lateral mode is oscillated in an active layer 4 located in such current path. Moreover, there is no fear of generating crystal distortion because each layer forming a semiconductor laser has almost equal lattice constant and thermal expansion coefficient and heat radiation efficiency can be enhanced because the buried layer 22 is composed of ZnSe having a high heat conductivity. |
