| 摘要 |
A nitride film of a predetermined thickness is formed on an underlying film containing a carbon atom while suppressing reduction of a film thickness of the underlying film. A film forming method forms a nitride film on a substrate which is arranged in a processing container of a film forming device, and has a carbon-containing film containing a carbon atom. The film forming method comprises a protection film forming process of forming a protection film on the carbon-containing film by plasma of a first reaction gas including a gas of nitride species having no hydrogen atom, and an inert gas. |
