| 摘要 |
PURPOSE:To improve the image resolution for a charge coupled (CCD) solid-state image pickup device which extracts the optical information of a photoelectric transducer on a semiconductor substrate, by shifting the optical diodes by 1/2 picture element size for each train and selecting and reading simultaneously two trains of signals of each diode. CONSTITUTION:The signal charges of left and right optical diodes D1-1 and D1-2 are collected to a CCD vertical shift register 2-1 via transfer gates 4-1 and 4-2 and turned into signals having no distinction from each other. Thus the diodes D1-1 and D1-2 form the same optical diode D. The register 2-1 is drien by a clock pulse generator 5, and a horizontal shift register 3' is driven by a clock pulse generator 6' respectively. A burying channel 11 is formed on a semiconductor substrate 10 for a diode D1 and the register 2-1, and a CCD electrode 8 which forms a vertical shift register doubling a transfer gate is formed via a gate oxide film 9. The electric charge of the D is sent to the channel 11 via transfer gate region 4-1 and 4-2 when the voltage of a high level is applied to the electrode 8. |
