SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SEMICONDUCTOR DEVICE AND SILICON CARBIDE SUBSTRATE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide substrate, a silicon carbide semiconductor device and a silicon carbide substrate manufacturing method, which can improve carrier lifetime and inhibit breakdown of a gate insulation film.SOLUTION: A silicon carbide substrate 10 has a silicon carbide epitaxial layer 12. The silicon carbide epitaxial layer 12 has a first principal surface 12b and a second principal surface 12d on the side opposite to the first principal surface 12b. A thickness T1 of the silicon carbide epitaxial layer 12 in a direction perpendicular to the second principal surface 12d is 50 μm and over. A density of Zcenters 1 existing in the silicon carbide epitaxial layer 12 is equal to or less than 1×10cm. A maximum depth D1 of pits 4 which result from threading dislocation 2 or basal plane dislocation 3 and open on the second principal surface 12d is equal to or less than 5 nm.SELECTED DRAWING: Figure 1