| 摘要 |
PURPOSE:To prepare an inexpensive panchromatic electrophotographic photosensitive element with high sensitivity, by forming an amorphous Si layer on a metal substrate by sputtering polycrystalline Si as a target in an Ar atmosphere having slight hydrogen partial pressure. CONSTITUTION:A photosensitive layer is formed on a metal substrate comprising a metal such as Al, Ni or stainless steel or Al having a surface subjected to anodic oxidation as referred hereinbelow. That is, polycrystalline Si or polycrystalline GaAs as a target is sputtered in an Ar atmosphere having slight hydrogen partial pressure to form the photosensitive layer comprising amorphous Si or amorphous GaAs. |
