| 摘要 |
PURPOSE:To form a chromium type film pattern with high dimensional preciseness at a high etching rate, by acting gas plasma containing a halogen gas and NOX gas on a material to be etched prepared by providing a photosensitive resin rilm having a predetermined pattern on a chromium type film. CONSTITUTION:A material to be etched prepared by providing a photosensitive resin layer having a predetermined pattern on a chromium type film is subjected to dry etching by mixed gas plasma containing at least a halogen gas, for example, CH2Cl2 and NO for example, NOX or NO2. By this method, the film reduction of the photosensitive resin film as an etching resistance mask material is suppressed and, at the same time, the high etching rate of the chromium type film is obtained. Therefore, a chromium type film pattern with high dimensional precisencess corresponding to the pattern of the resin film can be obtained. |
