| 摘要 |
PROBLEM TO BE SOLVED: To provide a load drive control device and a load drive control method, enabling improved reliability at the drive of a power semiconductor device while restraining the deterioration of the device at the drive.SOLUTION: An IGBT device 2ud includes a plurality of cells 8, 9 mutually electrically connected to a gate input terminal 10. Each time constant of the gate capacitance of a charge and discharge path of the plurality of cells 8, 9 is different between the two cells 8, 9. A drive control unit 15 performs control to drive a load according to the drive of the IGBT device 2ud. An acquisition unit 16 acquires a value corresponding to a load current which flows through the IGBT device 2ud. A drive control unit 15 drives the IGBT device 2ud by reducing a switching-off speed as a load conduction current, which is detected corresponding to the acquisition value of the acquisition unit 16, becomes higher.SELECTED DRAWING: Figure 1 |
