| 摘要 |
PURPOSE:To make a device highly compression resistant preventing its substrate from breaking and cracking while it is being forming by a method wherein a ring-like poly Si or Si reinforcement panel is alloyed on one side of main surface of a semiconductor substrate. CONSTITUTION:A reinforcement panel 9 with ring width of 2mm. is made of Si wafer with thickness around 1mm. and diameter around 85mm. and one side thereof is evaporated by Al film. On the other hand, one side of Mo plate 1 is evaporated by Al film while overall surface of anode and periphery of cathode of N type Si wafer 3 with thickness around 12mm. are also evaporated by Al film. The Mo plate 1, Si wafer and the reinforcement panel 9 are laminated and alloyed forming into one body. Next, the periphery of the alloy element is sanded on the reinforcement panel 9 and the alloy element is cut down verically and then horizontally forming sigma type bevel. Through this constitution, the poly Si plate 9 may inhibit the bevel to cause any breaking or pitching at the reinforcement panel 9 forming various types of highly compression resistant semiconductor devices. |
