| 摘要 |
PURPOSE:To enhance the reliability and to enlarge its effective area of the titled device by a method wherein an amorphous semiconductor layer is divided into a plurality of generating regions, p-i-n and n-i-p junctions are provided in adjoining layers, and electrodes in photo-receiving and rear surfaces are arranged to span two regions and to be displaced by one region. CONSTITUTION:Electrodes 6, 6', 6'' with a transparent photo-receiving surface are provided on a glass plate 5 and the central electrode 6' is approximately two times larger than the electrodes 6, 6'' located on the both sides. An amorphous semiconductor layer 7a is provided on the electrode 6, layers 7b and 7c on the left and right sides of the electrode 6', and a layer 7d on the electrode 6''. The layers 7a, 7c constitute p-i-n junctions from below while the layers 7b, 7d constitute n-i-p junctions from below. Rear-side electrodes 8a, 8b are installed bridging over the layers 7a, 7b and 7c, 7d. With the device being thus designed, adjoining generating regions are parallelly connected to the electrode 6'' via the electrodes 6, 8a and 6', 8b. This eliminates the need of a connecting surface and a generating region functions much more effectively. Long-term stability and higher reliability are ensured because there is no contact between the ITO front-surface electrode and the rear-side Al electrode. |
