| 摘要 |
PURPOSE:To suppress occurrence of a residual image in destaticization using a specified wavelength light, by forming an Se-As-halogen charge transfer layer and an Se-As charge generation layer on a conductive substrate. CONSTITUTION:Selenium contg. 30.0-38.7wt% As, and 100-1,000ppm halogen is vapor-deposited onto a conductive substrate by the ordinary method to form a 50-70mum thick charge transfer layer 2, and on this layer selenium contg. 30.0- 78.7wt% As is vapor deposited to form a charge generating layer 3 of 3-10mum thickness. As a result, even at the time of destaticization by 400-650nm wavelength light, carriers generated from the charge generating layer reach the conductive layer without being trapped at all, and consequently occurrence of a residual image can be remarkably restrained even in repeated uses. |
