发明名称 |
Power MOSFET. |
摘要 |
<p>A plurality of drain projections (22a-1, 22a-2, ...) are formed on a surface of a semiconductor substrate (21) in column and row directions. A portion is formed between two longitudinally adjacent drain projections (22a-1, 22a-2) so as to form a source electrode contact. A drain projection (22b-2) which is formed alongside the longitudinally adjacent drain projections (22a-1, 22a-2) is offset therefrom by a length corresponding to half of a long side of each projection.</p> |
申请公布号 |
EP0091079(A2) |
申请公布日期 |
1983.10.12 |
申请号 |
EP19830103132 |
申请日期 |
1983.03.29 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
TANABE, HIROHITO;OHATA, YU;MIWA, YUKIHARU;KURAMOTO, TSUYOSHI |
分类号 |
H01L29/10;H01L29/78;(IPC1-7):01L29/78;01L29/08 |
主分类号 |
H01L29/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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