发明名称 |
Method of manufacturing semiconductor integrated circuit devices |
摘要 |
Spaced recesses are formed in a surface of a low impurity concentration P type single-crystal substrate by using a mask. A P type impurity is diffused at a high concentration into an entire surface of the substrate including the recesses to form a P type diffused layer, and an N type layer is epitaxially grown on the P type diffused layer. Then, mask layers are formed on bottom surfaces of the recesses in the epitaxially grown N type layer and this N type layer is anisotropically etched by using the mask layers to form island regions in the recesses. After removing the mask layers, N type diffused layers are formed to cover the island regions. An insulating film (SiO2) acting to isolate completed transistor elements is formed on the P and N type diffused layers, and a polycrystalline silicon layer acting as a support of a dielectrically isolated integrated circuit device is formed on the insulating film. Then, the rear surface of the single-crystal silicon substrate is ground off to expose the insulating film. MOS or bipolar type transistor elements are formed in the island regions to obtain a dielectrically isolated semiconductor integrated device.
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申请公布号 |
US4408386(A) |
申请公布日期 |
1983.10.11 |
申请号 |
US19810326751 |
申请日期 |
1981.12.02 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD.;NIPPON TELEGRAPH AND TELEPHONE PUBLIC CORPORATION |
发明人 |
TAKAYASHIKI, TETSUYA;USUI, TAIJI;SAKURAI, TETSUMA |
分类号 |
H01L21/762;(IPC1-7):H01L21/76;H01L21/20 |
主分类号 |
H01L21/762 |
代理机构 |
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