| 摘要 |
<p>PURPOSE:To form an orienting layer which orients a liq. crystal at 45-90 deg.C pretilt angle by controlling a vapor deposition controller so that the extent of vapor deposition becomes maximum in a specified orientation of a substrate to be treated and minimum in the reverse orientation. CONSTITUTION:A substrate 1 is fixed on the substrate support 15 of a rotating mechanism 14 provided with a motor. The normal line 6 coincides with the rotating shaft 16 of the mechanism 14, and beams 5 from a vapor deposition source heated by resistance heating or electron beam heating are incident on the substrate 1 at an angle theta to the line 6. While rotating the substrate 1 together with the support 15 at a constant angular velocity, SiO is deposited at 80 deg. angle of vapor deposition until the deposited film attains to >= about 100Angstrom average thickness. A sandwich type liq. crystal cell is fabricated using the treated substrate. The pretilt angle of liq. crystal molecules can be controlled in the wide range of 45-90 deg. with high reproducibility, and the substrate has superior heat resistance because of the inorg. treatment.</p> |
