| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and apparatus for the deposition of a III-V semiconductor layer.SOLUTION: An apparatus includes: a process chamber 1; a susceptor 2 for receiving one or more substrates; a heater 3 for heating the susceptor 2 to a process temperature; and a gas inlet member 4 which comprises first and second process gas inlet zone 5, 6, 7, each for introducing process gas into the process chamber. In the apparatus, an etching gas inlet 9 opens into the process chamber 1 on a downstream side of the process gas inlet zones, in a flow direction 23 of a hydride and an organic metal compound, and a control device performs control such that and the process gas inlet zones and the etching gas inlet are arranged such that the process gas delivered from the process gas inlet zones during deposition of a semiconductor layer cannot enter into the etching gas inlet and the etching gas delivered from the etching gas inlet during purification of the process chamber cannot enter into the process gas inlet zones.SELECTED DRAWING: Figure 2 |
