Normally-on enhancement mode MOSFET with negative threshold gating

摘要

A VLSI enhancement mode metal oxide semiconductor field effect transistor operative to be Normally-On except during those periods when a negative threshold voltage is applied to the gate electrode. A submicron MOSFET channel having relatively high resistivity substrate allows for source and drain PN junction with overlapping depletion regions to create an electric field that promotes a surface inversion layer in the channel for conduction between the source and drain in a Normally-On mode except upon application of a negative gate threshold that acts to invert the channel surface to a non-conducting mode.