| 摘要 |
PURPOSE:To prevent deterioration of element by fetching contaminated metal introduced into the surface of semiconductor substrate to an oxide film obtained by the anode oxidation by the reactive ion etching and by purifying semiconductor substrate surface through removal of such oxide film. CONSTITUTION:A silicon oxide film 2 is formed on the upper surface of a silicon substrate 1, moreover a photo resist 3 is coated thereon and an opening is formed through exposure using a photo mask. Thereafter, an opening is formed on an oxide film 2 by irradiating a reactive ion beam generated in the plasma. An oxide film 5 is formed by the anode oxidation on the exposed silicon substrate 1. Thereby the contaminated metal on the surface of silicon substrate 1 is fetched into the oxide film 5. An element is then dipped into aqueous solution which dissolves the oxide film 5 in order to remove the oxide film 5. |
