| 摘要 |
PURPOSE:To enhance the reliability by a method wherein a heat treatment is performed under the state less than the temperature of deposition, and an electrode material is evaporated after amorphous Si is deposited on substrate. CONSTITUTION:A-Si is deposited in the order of P type, I type, and N type on the glass substrate with a clear electrode. Next, heat treatments at 100 deg.C, 120 deg.C, 150 deg.C, 170 deg.C, 180 deg.C, 200 deg.C, and 250 deg.C are performed by separate samples for approx. 30min, and thus Al is evaporated. After this pre-treatment, heat treatments at 100 deg.C, 150 deg.C, 200 deg.C, and 250 deg.C are further performed for 30min. This is the heat treatment whereby the process to form a protection film and the test of life time accelaration are assumed. The numeral 1 in the figure represents one heat-treated for 90min at 200 deg.C before evaporating Al, and 2 represents one without a pre-teratment. The post-treatment is for 30min at 200 deg.C. As a result, in the element without performing a pre-treatment, Si is diffused in Al. But, one finished in pre-treatment does not have mutual diffusions and has less deteriorations in the characteristic of a solar battery. |
