| 摘要 |
PURPOSE:To reduce the collector resistance of a transistor and thus change it into high dv/dt strength by a method wherein a low resistance layer of resistivity lower than that of the single crystal Si region in an inductor isolation substrate and of the same conductivity type, and a transistor is formed in this low resistance layer. CONSTITUTION:The n<+> low resistance layer 34 is formed in the n type single crystal Si region 33 which is insulation-isolated by an oxide film 32 for inductor isolation and supported by a polycrystalline Si 31, and an n<++> collector layer 37, an n<++> emitter layer 36, and a p-base layer 35 are formed. Further, a stabilization film 38 is laminated on the sufaces thereof, and accordingly an n-p-n transistor is constituted. |
