发明名称 PRESSURIZED CONTACT GATE FLAT TYPE SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To easily positioning gate contact and ensuring the stopping of the rotation of gate by supporting the pressurized contact gate with a supporter of external housing and by reinforcingly support the supporter with auxiliary material member. CONSTITUTION:A flat type semiconductor element 10 is housed in an almost cylindrically shaped external housing and is fixed by a cap 12 which is pressurizingly in contact with both upper and lower surfaces and the almost U-shaped pressurizingly contact area 13a of the pressurized contact gate 13 is in contact with the specified area. The other end of the pressurized contact gate 13 is supported by being inserted into a supporter 14 formed at the external housing 11, and an auxiliary material 15 consisting of the reinforcing wiring is provided by welding etc. at the area near the pressurizingly contact area 13a. Both ends of auxiliary material 15 is supported by being inserted into the auxiliary pipe 16 formed at the external housing 11. Since the pressurized contact gate 13 is supported by three points, the pressurizingly contact area 13a can be vertically provided correctly and easily to the flat type semiconductor element 10.</p>
申请公布号 JPS58171840(A) 申请公布日期 1983.10.08
申请号 JP19820054490 申请日期 1982.04.01
申请人 TOKYO SHIBAURA DENKI KK 发明人 ANDOU MASARU
分类号 H01L21/52;H01L21/60;H01L23/04;H01L23/051 主分类号 H01L21/52
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